Accession Number:

ADP012753

Title:

Far Infrared Phenomena in P-Type MQW Heterostructures Under Lateral Electric Field

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NIZHNY NOVGOROD INSTITUTE FOR PHYSICS OF MICROSTRUCTURES

Report Date:

1998-06-01

Pagination or Media Count:

4.0

Abstract:

Experimental investigation of the far-infrared FIR optical properties connected with intersubband and impurity-to-2D subband states transitions of holes in MQW lnxGa1-xAsGaAs and GeGe1-xSix heterostructures under lateral transport was pefformed. The mechanism of the inversion population and the far infrared amplification on the excited states to QW state transitions under lateral heating is proposed.

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE