Accession Number:

ADP012747

Title:

Interfaces Correlation Effect in 2D GaAs/AlAs Heterostructures

Descriptive Note:

Conference Proceedings

Corporate Author:

SAINT PETERSBURG STATE UNIV (RUSSIA)

Report Date:

1998-06-01

Pagination or Media Count:

4.0

Abstract:

A single 4.5-nm GaAs quantum well QW is grown into GaAsAlAs superlattices SL. For a sample with 120-s growth interruptionS GI at the GaAs surfaces we have exciton linewidth the same as for best quality GaAsAlAs thin QW with long time GI at bottom and top interfaces. For the sample wfth 120-s and 20-s GI at the GaAs and AlAs surfaces, respectively, the smallest linewidth 1.4 meV occurs when the AlAs thickness is exactly an integer number of monolayers ML. Then each AlAs surface almost reproduces the large-island GaAs surface just below it interface correlation effect, providing a better AlAs surface on which the QW is grown.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE