Accession Number:

ADP012739

Title:

Atomic Resolution Observation of GaAs Doped with Sn by Scanning Tunneling Microscopy

Descriptive Note:

Conference proceedings

Corporate Author:

LUND UNIV (SWEDEN) DEPT OF SOLID STATEPHYSICS

Report Date:

1998-06-01

Pagination or Media Count:

4.0

Abstract:

Substitutional donor Snsub Ga atoms in the near surface region below the GaAs 110 cleaved surface were observed by ultrahigh vacuum STM. Surface Sn atoms were observed as localized features, whereas subsurface Sn atoms have delocalized nature wfth the mean width of 2.5 nm. For an atom, elementary act of surface diffusion was observed and surface diffusion coefficient at room temperature was evaluated.

Subject Categories:

  • Solid State Physics
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE