Room Temperature Ballistic Transport in Deeply Etched Cross-Junctions
ROYAL INST OF TECH STOCKHOLM (SWEDEN) DEPT OF ELECTRONICS
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We measured the transmission in nanoscopic cross-junctions at variable temperature. The devices were prepared by deep etching through a two-dimensional electron gas in InGaAsInP samples. Our experiments show that the transmission characteristic is partly ballistic even at room temperature. The measrements are analysed in terms of an equivalent network, and the involved resistances are related to the electron mean free path.
- Solid State Physics