Accession Number:

ADP012674

Title:

InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

Descriptive Note:

Symposium proceedings

Corporate Author:

TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER

Report Date:

2002-01-01

Pagination or Media Count:

6.0

Abstract:

We describe the operation of lasers having active regions composed of InP self-assembled quantum dots embedded in In0.5Al0.3Ga0.2P grown on GaAs 100 substrates by MOCVD. InP quantum dots grown on In0.5Al0.3Ga0.2P have a high density on the order of about 1 - 2 x 10sq cm with a dominant size of about 10-15 nm for 7.5 ML growth. 1 These In0.5Al0.3Ga0.2PInP quantum dots have previously been characterized by atomic-force microscopy, high-resolution transmission electron microscopy and photoluminescence. 2 We report here the 300 K operation of optically pumped red-emitting quantum dots using both double quantum dots active regions and quantum-dot coupled with InGaP quantum-well active regions. Optically and electrically pumped 300 K lasers have been obtained using this active region design these lasers show improved operation compared to the lasers having QD-based active region with threshold current densities as low as Jsub tl 0.5 KAsq cm.

Subject Categories:

  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE