The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO2:nc-Si
PHYSICAL TECHNOLOGICAL CENTER GORKY (RUSSIA)
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The results of an experimental research of the dependence of photoluminescence PL intensity in region about 800 nm for silicon nanoinclusions quantum dots obtained by Si ion implantation in SiO2 on the dose of Si ions at two temperatures of an annealing Tsub ann 1000 and 1100 deg C are presented. It is established that in both cases the dependences have the shape of the curves with a maximum. For 1100 deg C the maximum is shifted to the lower dose. The influence of an additional ion doping by the phosphorus on intensity of PL is investigated depending on the dose concentration of P and the dose of the silicon at Tsub ann 1000 deg C. It is shown, that in all the investigated region of P doses, the presence of P enhances the PL. The degree of the enhancement increases with the P dose, but the rate of the intensity enhancement goes down. With the growth of Si dose at the constant dose of P, the degree of the enhancement decreases. In an approximation of an effective mass, the energy spectra of a quantum dot are calculated at the presence of one or several P atoms for various their arrangement.
- Solid State Physics