Accession Number:

ADP012669

Title:

Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

Descriptive Note:

Symposium proceedings

Corporate Author:

NEW SOUTH WALES UNIV KENSINGTON (AUSTRALIA) SCHOOL OF PHYSICS

Report Date:

2002-01-01

Pagination or Media Count:

7.0

Abstract:

Ion implantation induced intermixing of GaAsAlGaAs and InGaAsAlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as 5 x 10exp 16sq cm. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAsAlGaAs quantum well infrared photodetectors QWIPs. Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE