Accession Number:

ADP012656

Title:

Effect of Zn Atom Diffusion in the Active Layer of InGaAlP Visible-LED Investigated by the Piezoelectric Photothermal Spectroscopy

Descriptive Note:

Symposium proceedings

Corporate Author:

MIYAZAKI UNIV (JAPAN) DEPT OF ELECTRICAL AND ELECTRONIC ENGINEERING

Report Date:

2002-01-01

Pagination or Media Count:

6.0

Abstract:

It has been reported that Zn atoms diffused from the Zn-doped p-InAlP cladding to the active layer in InGaAlP visible-light-emitting diodes cause a degradation of light output efficiency. A doping effect of the Zn atoms was then investigated using a Piezoelectric Photothermal Spectroscopy from a nonradiative transition point of view. The results indicate that the Zn-doping unexpectedly induces a decrease of the nonradiative component of the electron transitions above the band gap of the active layer. The experimental results are explained by considering that Zn doping cause the increase of both shallow and deep acceptor levels at the same time with the different rate for generation.

Subject Categories:

  • Electrical and Electronic Equipment
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE