Accession Number:

ADP012655

Title:

Gas Source MBE Growth and Characterization of TlInGaAs/InP DH Structures for Temperature-independent Wavelength LD Application

Descriptive Note:

Symposium proceedings

Corporate Author:

OSAKA UNIV (JAPAN) INST OF SCIENTIFIC AND INDUSTRIAL RESEARCH

Report Date:

2002-01-01

Pagination or Media Count:

5.0

Abstract:

TlInGaAsInP double-hetero DH structures were grown on 100 InP substrates by gas source MBE. The photoluminescence PL peak energy variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13, the PL peak energy varied only slightly with temperature -0.03 meVK. This value corresponds to a wavelength variation of 0.04 nmK and is much smaller than that of the lasing wavelength of InGaAsPInP distributed feedback laser diodes 0.1 nmK. TlInGaAsInP light emitting diodes with 6 Tl composition were fabricated and the small temperature variation of the electroluminescence peak energy -0.09 meVK was observed at the wavelength around 1.58 micrometers. The results are promising to realize the temperature-independent wavelength laser diodes, which are important in the wavelength division multiplexing WDM optical fiber communication systems.

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE