I-V and C-V Characteristics of nGaAs-nInSb Heterojunctions Obtained by Pulsed Laser Deposition Technique
NATIONAL ACADEMY OF SCIENCE ASHTARAK (ARMENIA) INST OF RADIOPHYSICS AND ELECTRONICS
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Using pulsed laser deposition technique, nGaAs-nInSb heterojunctions HJs are obtained. Their electrical properties are studied. The Current-Voltage Characteristics show that obtained HJs possess rectifying properties. The rectification coefficient depends strongly on the doping level of GaAs substrate. The linear dependence of Cexp -2 V curve in Capacitance-Voltage characteristics, as well as the change of photo-response sign with wavelength, indicates that the HJs have abrupt interface, which is, to the best of oar knowledge, a novel result for these HJ materials. The full number of interface states arising due to the lattice mismatch is determined which is in agreement with Hall measurements. Current-Voltage characteristics of obtained His are analogous to those of metal-semiconductor junction. Based on the obtained results the energy band diagrams of nGaAs-nInSb HJ is constructed taking into account the interface states.
- Electricity and Magnetism
- Solid State Physics