Accession Number:

ADP012652

Title:

Airplane and Drop Experiments on Crystallization of InxGa1-xSb Semiconductor under Different Gravity Conditions

Descriptive Note:

Symposium proceedings

Corporate Author:

VICTORIA UNIV (BRITISH COLUMBIA)

Report Date:

2002-01-01

Pagination or Media Count:

7.0

Abstract:

Melting and crystallization experiments of InGaSb were done under the reduced gravity condition 10exp -2 G in an airplane and at the normal gravity condition lG in the laboratory. Crystallized InGaSb was found to contain many needle crystals in both the cases. Reduced gravity condition was found to be more conducive for crystal growth than the normal gravity condition. Formation of spherical projections on the surface of InGaSb during its crystallization was in-situ observed using a high speed CCD camera in the drop experiment. Spherical projections showed dependence of gravity during its growth. Indium compositions in the spherical projections were found to vary depending on the temperature.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE