Accession Number:

ADP012648

Title:

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al(0.2)Ga(0.8)As Blocking Layers

Descriptive Note:

Symposium proceedings

Corporate Author:

TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER

Report Date:

2002-01-01

Pagination or Media Count:

6.0

Abstract:

InAsAlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 micrometers. At 77 K and 4.7 V bias the responsivity was 14 mAW and the detectivity, D, was 10exp 10 cm Hz sup 12W.

Subject Categories:

  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE