Accession Number:

ADP012618

Title:

Intersubband Transitions in InGaAs/InAlAs Multiple Quantum Wells Grown on InP Substrate

Descriptive Note:

Symposium proceedings

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Report Date:

2002-01-01

Pagination or Media Count:

6.0

Abstract:

Intersubband transitions in In0.52Ga0.48AsIn0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared FTIR absorption and photoluminescence FTPL techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 A. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAsAlGaAs multiple quantum wells.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE