Accession Number:

ADP012613

Title:

Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

Descriptive Note:

Symposium proceedings

Corporate Author:

NATIONAL INST OF STANDARDS AND TECHNOLOGY GAITHERSBURG MD

Report Date:

2002-01-01

Pagination or Media Count:

6.0

Abstract:

Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGa1-xAs layers x 0.1 to 1.0 showed that the epitaxial growth method does not influence the oxidation rate. Nearly identical oxidation depths were measured for samples grown by both techniques. It was found, however, that the oxidation rate is very sensitive to non-uniformities in the Al concentration in the AlxGa1-xAs layers, and that maintaining consistent and uniform Al concentrations is critical to achieving reproducible oxidation rates. The study also showed that the oxidation rate was not affected by the VIII ratio during growth nor by impurities at concentrations less than or equal to 10 ppm.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE