Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN
LINKOEPING UNIV (SWEDEN)
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The optically detected magnetic resonance ODMR technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to he deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an Assub Ga antisite. These two defects gain more importance with increasing N composition up to 3, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3 seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy MBE, but can be rather efficiently removed by post-growth rapid thermal annealing.
- Properties of Metals and Alloys
- Solid State Physics