Accession Number:

ADP012591

Title:

Electronic Structure Near the Band Gap of Heavily Nitrogen Doped GaAs and GaP

Descriptive Note:

Symposium proceedings

Corporate Author:

NATIONAL RENEWABLE ENERGY LAB GOLDEN CO

Report Date:

2002-01-01

Pagination or Media Count:

12.0

Abstract:

Isoelectronic impurity nitrogen atoms have been found to generate a series of localized states in GaP and GaAs. These states can be either bound within the band gap or resonant above the band gap when in the dilute doping limit roughly 10exp 19cu cm for GaP and 10exp 18cu cm for GaAs. With increasing nitrogen doping level, a shift of the absorption edge from the binary band gap has been observed for the so-called GaPN or GaAsN alloy. We discuss the similarity and dissimilarity between the two systems in the following aspects 1 How does the nitrogen doping perturb the host band structure 2 How do the nitrogen bound states evolve with increasing nitrogen doping level 3 What are the dominant contributors to the band edge absorption And 4 does a universal model exist for GaPN and GaAsN Other issues that will be discussed are how does one define the band gap for these materials, and what is the relevance of various theoretical band structure calculations to the experimentally measured parameters.

Subject Categories:

  • Properties of Metals and Alloys
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE