The Role of Nitrogen-Induced Localization and Defects in InGaAsN (2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition
SANDIA NATIONAL LABS ALBUQUERQUE NM
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Nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN approx. 1.1 eV bandgap grown by molecular beam epitaxy MBE and metal-organic chemical vapor deposition MOCVD. Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale mean free path material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material reversed from the hole diffusion occurring in MOCVD material, and minority carrier diffusion in InGaAsN cannot be explained by a universal, nitrogen-related defect.
- Solid State Physics