Accession Number:

ADP012585

Title:

Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

Descriptive Note:

Corporate Author:

HEBEI INST OF TECH TIANJIN (CHINA)

Report Date:

2002-01-01

Pagination or Media Count:

6.0

Abstract:

InGaAsPInP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering IFVD. The luminescent characteristics was investigated using photoluminescence PL and photoreflectance PR, from which the band gap blue shift was observed. SiN4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal annealing RTA. The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAsInP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the SiN4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE