Accession Number:

ADP012191

Title:

Catalyst-Free Growth of Large Scale Ga2O3 Nanowires

Descriptive Note:

Corporate Author:

NATIONAL CHENG KUNG UNIV TAINAN (TAIWAN) DEPT OF CHEMICAL ENGINEERING

Report Date:

2001-11-01

Pagination or Media Count:

6.0

Abstract:

Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.

Subject Categories:

  • Properties of Metals and Alloys

Distribution Statement:

APPROVED FOR PUBLIC RELEASE