Accession Number:

ADP012154

Title:

Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia

Descriptive Note:

Proceedings

Corporate Author:

MARYLAND UNIV COLLEGE PARK DEPT OF MATERIALS AND NUCLEAR ENGINEERING

Report Date:

2001-04-01

Pagination or Media Count:

5.0

Abstract:

We report structural studies of large-scale wurtzite GaN nanowires fabricated by direct reaction of Ga vapor and NH3. This recently reported growth technique 1 demonstrates processing of GaN one-dimensional structures as thin as 26 nm and up to 500 micrometers in length. This method is both interesting and attractive in that fabrication is carried out without the assistance of template materials as required by other methods. In this study, transmission electron microscopy TEM is used to characterize the nanowires, while x-ray diffraction XRD and energy dispersive x-ray spectroscopy EDS data provide supporting structuralcompositional analysis. Our structural investigation reveals the presence of thin hexagonal platelets, which we believe play a critical role in the nucleation, growth, and orientation of the wires. In particular, our findings indicate that most of the wires grow along the 2110 direction, normal to the platelet edges.

Subject Categories:

  • Physical Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE