Accession Number:

ADP011922

Title:

Modeling of the Carrier Mobility at the Silicon Oxynitride-Silicon Interface

Descriptive Note:

Conference proceedings

Corporate Author:

MILITARY UNIV OF TECHNOLOGY WARSAW (POLAND)

Personal Author(s):

Report Date:

2001-01-01

Pagination or Media Count:

5.0

Abstract:

The main issue which is yet to be resolved in further developing the Surface Channel MOSFETs SCMOSFETs is understanding and eliminating deterioration of the carrier mobility at the insulator-semiconductor interface. The main factor causing this deterioration is hole and electron trapping-detrapping. One of the ways recently suggested of minimizing hole and electron trapping-detrapping at the Si-SiO2 interface involves replacing the SiO2 by silicon oxynitride SiON. However degradation of MOSFETs, which have oxynitrides as gate dielectric, caused by trapping of hot electrons from the channel, is still found.

Subject Categories:

  • Inorganic Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE