Accession Number:

ADP011918

Title:

Thermal Ionization Energy of Mg Acceptors in GaN: Effects of Doping Level and Compensation

Descriptive Note:

Conference proceedings

Corporate Author:

HUNGARIAN ACADEMY OF SCIENCES BUDAPESTHUNGARY RESEARCH INST FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE

Personal Author(s):

• Podor, B.

Report Date:

2001-01-01

Pagination or Media Count:

5.0

Abstract:

It is shown that the thermal ionization energy of Mg acceptors in GaN, as determined by temperature dependent Hall effect measurements, exhibits the usual dependence on the concentration of ionized impurities, as seen in many other semiconductors. The observed difference in the thermal and optical ionization energies of Mg acceptors can be quantitatively understood based on a simple electrostatic interaction model.

Descriptors:

• *THERMAL PROPERTIES
• *MAGNESIUM
• *IONIZATION
• *ELECTRON ACCEPTORS
• *GALLIUM NITRIDES
• OPTICAL PROPERTIES
• QUANTITATIVE ANALYSIS
• SYMPOSIA
• ELECTROOPTICS
• INTERACTIONS
• HALL EFFECT
• SEMICONDUCTORS
• IMPURITIES
• CONCENTRATION(COMPOSITION)
• DOPING
• COMPENSATION
• ELECTROSTATICS
• HUNGARY
• WIDE GAP SEMICONDUCTORS

Subject Categories:

• Inorganic Chemistry
• Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE