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Non-Linear I-V Characteristics and Threshold Switching in As-Te-In Glasses

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Non-linear I-V behaviour and electrical switching exhibited by chalcogenide glassy semiconductors, find applications in variety of areas including information storage and power control. In this work, semiconducting chalcogenide As40Te60-xInx glasses 7.5 - x - 16.5 have been prepared by melt quenching technique. The current-voltage and electrical switching behaviour of these glasses have been studied using a custom-built PC based system. The results obtained clearly indicate that all the glasses studied exhibit current controlled negative resistance behaviour, which leads to the low resistance state. The switching to the low resistance state is found to be reversible threshold behaviour and the samples revert back to the high resistance state on reducing the current. Threshold switching over such a wide range of compositions has been observed only in very few systems so far. The most interesting outcome of the present studies is the variation of the switching voltage with composition. It is observed that there is an increase in the switching voltage threshold voltage Vsub t with the increase in indium concentration in the composition range 7.5 - x - 12.3. Further, the composition dependence of switching field is found to exhibit a distinct change in slope at x12.3 mechanical threshold and Vsub t continues to increase with x until x13.5. Mound x13.5, the trend is reversed and Vsub t starts decreasing with x. A minimum in Vsub t is seen around the composition x14.3, which corresponds to the chemical threshold of the As-Te-in system. Beyond x14.3, switching voltage is found to increase with composition again. The present results are consistent with earlier observations, which indicate the composition dependence of switching voltages of chalcogenide glasses are influenced by chemical ordering and rigidity percolation.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Ceramics, Refractories and Glass

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