Accession Number:

ADP011896

Title:

Semiconductor Surface Characterization by Scanning Probe Microscopies

Descriptive Note:

Conference proceedings

Corporate Author:

CHEMNITZ UNIV OF TECHNOLOGY (GERMANY) INST OF PHYSICS

Personal Author(s):

• Hietschold, Michael
• Mueller, Anne-D.
• Mueller, Falk

Report Date:

2001-01-01

Pagination or Media Count:

5.0

Abstract:

Besides the well-known 3-dimensional surface topography, scanning probe methods give access to a whole world of local physical information on solid surfaces. Here, we demonstrate opportunities given by scanning tunnelling spectroscopy STS and scanning electrical force microscopyspectroscopy SEFMSEFS. In this paper, we compare the wide-spread UHV-STMSTS technique with ambient SEFMSEFS. After short description of the methods, some applications to semiconductor surfaces are discussed. Possibly SEFS has a great potential for local electronic spectroscopy in near future.

Descriptors:

• *SEMICONDUCTOR DEVICES
• *SURFACE PROPERTIES
• ELECTRONICS
• SPATIAL DISTRIBUTION
• SCANNING ELECTRON MICROSCOPES
• SYMPOSIA
• HIGH RESOLUTION
• TOPOGRAPHY
• SILICON
• GERMANY
• NEAR FIELD
• SOLID BODIES
• ULTRAHIGH VACUUM

Subject Categories:

• Electrical and Electronic Equipment
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE