Accession Number:

ADP011890

Title:

Theory of Behavior of Ionized Hydrogen in GaSb Crystal Structure

Descriptive Note:

Conference proceedings

Corporate Author:

CZECH ACADEMY OF SCIENCES PRAGUE INST OF PHYSICS

Report Date:

2001-01-01

Pagination or Media Count:

5.0

Abstract:

Using the thermodynamical studies it seems proved that ionized hydrogen acts as amphoteric dopant of GaSb. It is splitting to H acceptor and H- donor and between these two kinds certain equilibrium is created depending on the concentration of acceptors and donors impurities in the GaSb material. There is an inclination of such a crystal to maintain the GaSb structure to be isoelectric. This behavior has been studied on undoped and slightly Te-doped GaSb single crystals grown by use of the Czochralski method without encapsulant under a flow of ionized hydrogen. For comparison the studies were repeated under a flow of molecular hydrogen.

Subject Categories:

  • Physical Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE