Accession Number:
ADP011890
Title:
Theory of Behavior of Ionized Hydrogen in GaSb Crystal Structure
Descriptive Note:
Conference proceedings
Corporate Author:
CZECH ACADEMY OF SCIENCES PRAGUE INST OF PHYSICS
Personal Author(s):
Report Date:
2001-01-01
Pagination or Media Count:
5.0
Abstract:
Using the thermodynamical studies it seems proved that ionized hydrogen acts as amphoteric dopant of GaSb. It is splitting to H acceptor and H- donor and between these two kinds certain equilibrium is created depending on the concentration of acceptors and donors impurities in the GaSb material. There is an inclination of such a crystal to maintain the GaSb structure to be isoelectric. This behavior has been studied on undoped and slightly Te-doped GaSb single crystals grown by use of the Czochralski method without encapsulant under a flow of ionized hydrogen. For comparison the studies were repeated under a flow of molecular hydrogen.
Descriptors:
Subject Categories:
- Physical Chemistry
- Crystallography