Effect of Stress in Defect Transformation in Hydrogen Implanted Silicon and SOI Structures
RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS
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Transformation of defects in hydrogen implanted silicon and silicon-on-insulator structures caused by external pressure of argon ambient up to 1.5 GPa at the stage of defect removal in implanted material and high temperature annealing SOI structures is reported. The results are compared to these for crystals annealed at argon atmosphere of ambient pressure. Formation of the new phase crystallites was found in SOI structures annealed at high temperature in conditions of high pressure 1.2 GPa. Small insulations were also observed in hydrogen implanted silicon, which can be patterns of the new phase. Two reasons can cause phase transformation in the top silicon layer of as-bonded SOI structures high hydrogen concentration and high local strain.