Accession Number:

ADP011884

Title:

Investigation of As-Grown Nitrogen-Doped Czochralski Silicon

Descriptive Note:

Conference proceedings

Corporate Author:

ZHEJIANG UNIV HANGZHOU (CHINA) LAB OF SILICON MATERIAL SCIENCE

Report Date:

2001-01-01

Pagination or Media Count:

4.0

Abstract:

Two Czochralski CZ silicon ingots, named NCZ and ACZ silicon, were grown under the same procedure in nitrogen and an argon atmosphere respectively. The experiments reveal that nitrogen was doped into the silicon ingot and N-O complexes were generated during the crystal growth, while it was grown in a nitrogen atmosphere. The nitrogen concentration profile in the NCZ silicon ingot indicates that the nitrogen concentration in the wafer edges was less than that in the center. It is also found that the as-grown oxygen-thermal donors were almost same. Furthermore, it is discovered that the profile of phosphorus concentration in NCZ silicon was also the same as that in ACZ silicon. It is considered that compared with argon atmosphere, nitrogen atmosphere has no influence on the evaporation rates of phosphorus from melting silicon.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE