Accession Number:

ADP011883

Title:

Investigation of System Si-O (SiOx) Behavior in DAC at Submegabar Pressure

Descriptive Note:

Conference proceedings

Corporate Author:

INSTITUTE OF ELECTRON TECHNOLOGY WARSAW(POLAND)

Report Date:

2001-01-01

Pagination or Media Count:

6.0

Abstract:

Extensive experiment studies of the IV elements have been made in recent years. Motivations have included the rich variety of phase and structural transitions. Different SiO2-x defects can be created in Czochralski grown silicon, Cz-Si, by appropriate pre-annealing at atmospheric pressure 10exp 5 Pa. Some date concerning the effect of enhanced hydrostatic pressure on creation of defects in the Si- SiO2-x system have been reported for defects-containing Cz-Si subjected to cyclic hydrostatic pressure treatment. An attempt to observe the mentioned hydrostatic pressure-induced effect of massive creation of new defects in Cz-Si with oxygen-related defects was undertaken in this work. The increase of defect concentration in the hydrostatic pressure-treated Cz-Si samples with initially present SiO2-x precipitates can be considered as a proof of hydrostatic pressure-induced massive creation of defects on before-created oxygen-related defects. However, in the case of some DAC-treated samples, a misfit dislocation network was not directly proved to be created because of too small sample in comparison to the resolution of the spectroscopy and X-ray methods.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE