Accession Number:

ADP011881

Title:

Two-Dimensional Model of the Intrinsic Point Defects Behaviour during Cz Silicon Crystals Growth

Descriptive Note:

Conference proceedings

Corporate Author:

INSTITUTE FOR PROBLEMS IN MECHANICS MOSCOW (USSR)

Report Date:

2001-01-01

Pagination or Media Count:

7.0

Abstract:

Two-dimensional mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The results of its verification are compared with the data of the one-dimensional model supposing the fast vacancies and interstitials recombination near the liquid-solid interface. For various growth conditions and with using of the calculated two-dimensional temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE