Two-Dimensional Model of the Intrinsic Point Defects Behaviour during Cz Silicon Crystals Growth
INSTITUTE FOR PROBLEMS IN MECHANICS MOSCOW (USSR)
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Two-dimensional mathematical model of the intrinsic point defects recombination during Cz growth of dislocation-free silicon single crystals is developed. The results of its verification are compared with the data of the one-dimensional model supposing the fast vacancies and interstitials recombination near the liquid-solid interface. For various growth conditions and with using of the calculated two-dimensional temperature fields in Cz silicon crystals the resulting distributions of these intrinsic point defects in a crystal are analyzed.