Accession Number:

ADP011880

Title:

The Effect of High Pressure - High Temperature Treatment on Neutron Irradiation Induced Defects in Czochralski Silicon

Descriptive Note:

Conference proceedings

Corporate Author:

INSTITUTE OF ELECTRON TECHNOLOGY WARSAW(POLAND)

Report Date:

2001-01-01

Pagination or Media Count:

6.0

Abstract:

Czochralski-grown Cz-grown silicon crystals of the same initial oxygen content 8.33 x 10exp 7cu cm were subjected to various high temperature - high pressure HTHP treatments for different time durations. Subsequently, the crystals were irradiated by fast neutrons at 50 deg C. One of the main defects form is VO pair A-Center usually identified in the Infrared IR Spectra by the 830cm Localized Vibrational Mode LVM band. Upon annealing, this defect is converted to the VO2 defect responsible for a LVM band at 887cm. The purpose of this work is to study the effect of various combinations of HTHP treatment prior to irradiation on the annealing behaviour of the VO defect and particularly on its conversion to the VO2 defect. We have concluded that the conversion of VO to VO2 depends on the forms of oxygen impurity i.e., oxygen aggregates, precipitates etc. and on other defects created in the sample after the HTHP treatment, as for example dislocations and stacking faults.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE