Accession Number:

ADP011872

Title:

Growth and Structure of Strontium Doped LaGaO3

Descriptive Note:

Conference proceedings

Corporate Author:

POLISH ACADEMY OF SCIENCES WARSAW INSTOF PHYSICS

Report Date:

2001-01-01

Pagination or Media Count:

5.0

Abstract:

A series of La1-xSrxGaO3 solid solution single crystals with x 0, 0.04 and 0.12 were grown by the Czochralski method and with x 0.01, 0.06 and 0.1 by the floating zone method. The segregation coefficient of Sr in LaGaO3 has been found to be ksub eff Sr 1.25 - 0.01. The crystals were grown from the melt with stoichiometric Ga2O3 amount at a growth rate ranging from 2.5 mmh for pure LaGaO3 to 1.2 mmh for La0.88Sr0.12GaO3. The structure of these crystals was investigated by X-ray powder diffraction technique using CuKsub alpha radiation. The diffraction patterns were analyzed by Rietveld refinement method. Crystals with strontium concentrations from x 0 to 0.1 crystallizes adopting Pbnm structure. It was found that deviation from the ideal perovskite structure decreases with rising strontium concentration, finally reaching centrosymmetric Ibmm structure at x 0.12. Orthorombic unit cell parameters c and b decreases whereas a increases with x. Thermal analysis proved that the temperature of the first order phase transition observed in pure LaGaO3 at 150 deg C falls to 126 deg C at x 0.01 and remains almost constant at higher x.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE