Accession Number:

ADP011871

Title:

Annealing of GaSb Single Crystals in Ionised Hydrogen Atmosphere

Descriptive Note:

Conference proceedings

Corporate Author:

CZECH ACADEMY OF SCIENCES PRAGUE INST OF PHYSICS

Report Date:

2001-01-01

Pagination or Media Count:

4.0

Abstract:

GaSb undoped wafer were annealed in flowing ionised hydrogen atmosphere at temperature range between 100 - 350 deg C for 1 - 50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 deg C for 24 hours reached the resistivity of about 10exp 2 - 10exp 3 ohms.cm and the free carrier concentration was lower than 1 x 10exp 15cu cm. However, the thickness of the passivated layer was only 0.4 - 0.6 micrometer.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE