Annealing of GaSb Single Crystals in Ionised Hydrogen Atmosphere
CZECH ACADEMY OF SCIENCES PRAGUE INST OF PHYSICS
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GaSb undoped wafer were annealed in flowing ionised hydrogen atmosphere at temperature range between 100 - 350 deg C for 1 - 50 hours. The free carrier concentration and resistivity were measured. It was found out that the wafers being treated at a temperature of 150 deg C for 24 hours reached the resistivity of about 10exp 2 - 10exp 3 ohms.cm and the free carrier concentration was lower than 1 x 10exp 15cu cm. However, the thickness of the passivated layer was only 0.4 - 0.6 micrometer.
- Inorganic Chemistry