Accession Number:
ADP011870
Title:
Very High Quality Crystals of Wide-Gap II-VI Semiconductors: What for?
Descriptive Note:
Conference proceedings
Corporate Author:
POLISH ACADEMY OF SCIENCES WARSAW INSTOF PHYSICS
Personal Author(s):
Report Date:
2001-01-01
Pagination or Media Count:
8.0
Abstract:
A review of some of the most important applications of the wide-gap II-VI semiconductors is presented, the key parameters of the crystals for specific applications are emphasized, and the necessity of growing crystals of very high quality is substantiated. Modern methods of growth of high-quality wide-gap II-VI semiconductor crystals are shortly described. The results of the physical vapor transport method, chosen by the authors for ZnTe and CdZnTe crystals, are shown.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment
- Crystallography