Accession Number:

ADP011845

Title:

Fabrication and Characterization of Thin Ferroelectric Interferometers for Light Modulation

Descriptive Note:

Corporate Author:

NZ APPLIED TECHNOLOGIES WOBURN MA

Report Date:

2000-01-01

Pagination or Media Count:

10.0

Abstract:

A thin ferroelectric interferometer TFI structure for light modulating devices is presented. It was fabricated entirely with thin film techniques on sapphire and silicon substrates. The ferroelectric layer in this structure was the lanthanum-modified lead zirconate titanate PLZT electrooptic material deposited from a chemical precursor solution onto an ITO-coated dielectric mirror stack. Light intensity modulation in both transmission and reflection modes and phase modulation in the reflection mode were demonstrated. Experimental and simulation data show that TFI devices can be fast switching with a low driving voltage. Variations of the basic TFI structure can be used for phase tunable spatial light modulators SLMs and laser beam steering devices. Design principles fabrication procedure and the preliminary performance of the devices are described.

Subject Categories:

  • Computer Systems
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE