Accession Number:

ADP011812

Title:

Photoluminescence from Pressure - Annealed Nanostructured Silicon Dioxide and Nitride Films

Descriptive Note:

Conference proceedings

Corporate Author:

INSTITUTE OF ELECTRON TECHNOLOGY WARSAW(POLAND)

Report Date:

2000-01-01

Pagination or Media Count:

14.0

Abstract:

Light emission in thin films SiO2, SiO2Si and Si3N4 on a single crystalline silicon surface has been investigated after treatment at enhanced argon pressure, HP. Pronounced effect of HP up to 1.5 GPa during annealing up to 1550 K on photoluminescence, PL, of the SiO2, SiO2Si and Si3N4 films of 0.1 - 1.2 micrometers thickness has been stated. The pressure - temperature treatment results in development and enhancement of ultraviolet and visible PL at about 290 - 320, 360, 460, 600 and 680 um, related to stress induced creation of PL active silicon nanoclusters and other oxygen deficient defects.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE