Photoluminescence from Pressure - Annealed Nanostructured Silicon Dioxide and Nitride Films
INSTITUTE OF ELECTRON TECHNOLOGY WARSAW(POLAND)
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Light emission in thin films SiO2, SiO2Si and Si3N4 on a single crystalline silicon surface has been investigated after treatment at enhanced argon pressure, HP. Pronounced effect of HP up to 1.5 GPa during annealing up to 1550 K on photoluminescence, PL, of the SiO2, SiO2Si and Si3N4 films of 0.1 - 1.2 micrometers thickness has been stated. The pressure - temperature treatment results in development and enhancement of ultraviolet and visible PL at about 290 - 320, 360, 460, 600 and 680 um, related to stress induced creation of PL active silicon nanoclusters and other oxygen deficient defects.
- Inorganic Chemistry