Temperature Dependence of Low Energy Carrier Dynamics of Silicon by Terahertz Time Domain Spectroscopy
OSAKA UNIV (JAPAN) RESEARCH CENTER FORSUPERCONDUCTOR PHOTONICS
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The complex conductivity of moderately P-doped silicon wafers 1.1 plus or minus 0.2 ohm cm at various temperatures has been deduced by using a terahertz time-domain THz-TDS spectroscopy. The characteristic dispersion of the complex conductivity is observed in the THz region. Temperature dependence of the complex conductivity changes dramatically around 120 K, which is interpreted in terms of enhancement of mobility and the freezing of the carrier. The experimental data at low temperatures slightly deviates from the simple Drude model, which causes the underestimation of the mobility and overestimation of the carrier density.
- Solid State Physics