Accession Number:

ADP011789

Title:

An InGaAs/InAlAs Superlattice Oscillator for Frequencies Above 100 GHz

Descriptive Note:

Corporate Author:

INSTITUTE FOR RADIOPHYSICS NIZHNY NOVGOROD (RUSSIA)

Report Date:

2000-09-29

Pagination or Media Count:

3.0

Abstract:

We present an InGaAsInAlAs superlattice oscillator at 150 GHz with a superlattice device mounted in a waveguide and biased at a voltage of 1.3 V current 15 mA, radiation of a power of 0.1 mW was generated. In the doped superlattice, the electron motion is governed by miniband transport, leading to a negative differential conductance due to Bragg reflection of the electrons at the miniband boundary. As a consequence, propagating charge carrier domains are formed giving rise to microwave generation with the frequency determined by the domain velocity. By using superlattices with thinner layers it should be possible to reach higher domain velocities, and hence higher oscillation frequencies.

Subject Categories:

  • Crystallography
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE