Accession Number:

ADP011784

Title:

Electrical Detection of THz Frequencies by Asymmetrically Shaped n-n(+)-GaAs Diodes

Descriptive Note:

Corporate Author:

SEMICONDUCTOR PHYSICS INST VILNIUS (LITHUANIA)

Personal Author(s):

• Suziedelis, Algirdas
• Gradauskas, Jonas
• Asmontas, Steponas
• Valusis, Gintaras
• Roskos, Harmut G.

Report Date:

2000-09-29

Pagination or Media Count:

3.0

Abstract:

We propose a planar diode based on a thin asymmetrically-shaped n-n-GaAs junction prepared on an elastic polyimide film as THz detector. The device can be used to detect electromagnetic radiation in the range from 0.129 THz up to 2.5 THz at room temperature. The principle of operation of the device is based on non-uniform carrier heating effects caused by both the asymmetrical shape of the structure and the presence of the n-n junction. An estimate of the sensitivity of the device based on a phenomenological approach for the description of the physical processes gives good agreement with the experimental data within the studied range of frequencies.

Descriptors:

• *DETECTION
• *GALLIUM ARSENIDES
• *SHAPE
• *ELECTRICAL PROPERTIES
• *FAR INFRARED RADIATION
• *FREQUENCY BANDS
• *ASYMMETRY
• *JUNCTION DIODES
• EXPERIMENTAL DATA
• SYMPOSIA
• ELECTROOPTICS
• ELASTIC PROPERTIES
• ROOM TEMPERATURE
• ELECTROMAGNETIC RADIATION
• HEATING
• POLYMERIC FILMS
• PLANAR STRUCTURES
• N TYPE SEMICONDUCTORS
• PHOTOCONDUCTORS
• DIPOLE ANTENNAS
• POLYIMIDE RESINS

Subject Categories:

• Electrical and Electronic Equipment
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE