Accession Number:

ADP011770

Title:

THz Imaging of Carrier Concentration and Mobility in Silicon

Descriptive Note:

Corporate Author:

KANSAI ADVANCED REASEARCH LAB KOBE (JAPAN) COMMUNICATIONS RESEARCH LAB

Report Date:

2000-09-29

Pagination or Media Count:

4.0

Abstract:

Silicon samples have been imaged with THz radiation. The samples are n-type substrates, with half of one surface ion implanted with boron resulting in a 0.55 micrometer thin strongly p-doped layer. Silicon reflects and absorbs the THz beam due to a plasma resonance, subsequently the additional layer results in strong image contrast depending on the implantation dosage. Spectra of these samples have been fit using a refractive index and extinction coefficient calculated from the plasmon resonance carrier concentration and relaxation time are used as adjustable parameters. By the fitting spectra at every image position, THz images of the carrier concentration and carrier mobility in silicon can be obtained.

Subject Categories:

  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE