Accession Number:

ADP011741

Title:

Study of Terahertz Radiation from Narrow Bandgap Semiconductors: InAs and InSb

Descriptive Note:

Corporate Author:

KANSAI ADVANCED REASEARCH LAB KOBE (JAPAN) COMMUNICATIONS RESEARCH LAB

Personal Author(s):

• Gu, Ping
• Tani, Masahiko
• Kono, Shunsuke
• Sakai, Kiyomi

Report Date:

2000-09-29

Pagination or Media Count:

3.0

Abstract:

We investigated THz radiation from narrow bandgap semiconductors n-type, p-type InSb and InAs were investigated using a time-resolved THz detection system. As a reference, THz radiation from InP a wide bandgap semiconductor was also measured. From the polarity of the waveforms we concluded that the ultrafast build-up of a photo-Dember field is the main emission mechanism for both InAs and InSb.

Descriptors:

• *SEMICONDUCTORS
• *INDIUM ANTIMONIDES
• *NARROWBAND
• *INDIUM ARSENIDES
• SYMPOSIA
• WAVEFORMS
• ENERGY GAPS
• FAR INFRARED RADIATION
• BROADBAND
• INFRARED DETECTORS
• N TYPE SEMICONDUCTORS
• POLARITY
• SHORT PULSES
• P TYPE SEMICONDUCTORS
• MODE LOCKED LASERS

Subject Categories:

• Electrical and Electronic Equipment
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE