Study of Terahertz Radiation from Narrow Bandgap Semiconductors: InAs and InSb
KANSAI ADVANCED REASEARCH LAB KOBE (JAPAN) COMMUNICATIONS RESEARCH LAB
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We investigated THz radiation from narrow bandgap semiconductors n-type, p-type InSb and InAs were investigated using a time-resolved THz detection system. As a reference, THz radiation from InP a wide bandgap semiconductor was also measured. From the polarity of the waveforms we concluded that the ultrafast build-up of a photo-Dember field is the main emission mechanism for both InAs and InSb.
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