Accession Number:

ADP011735

Title:

THz Sources Based on Semiconductor Quantum Structures

Descriptive Note:

Corporate Author:

TECHNISCHE UNIV VIENNA (AUSTRIA) INST FUER FESTKOERPERELEKTRONIK

Report Date:

2000-09-29

Pagination or Media Count:

3.0

Abstract:

We present a study on spontaneous THz emission from semiconductor quantum structures. THz emission from parabolically graded AlGaAsGaAs quantum wells driven by an in-plane electric field has been measured. We have analyzed the grating coupled radiation in the temperature range from 20 K to 240 K. The peak emission corresponds to the intersubband plasmon in the parabolic potential. From a quantum cascade structure we observe spontaneous THz emission, based on carrier injection into the excited state of a 26 nm quantum well. We have measured luminescence at a photon energy of 17.3 meV with a full linewidth at half maximum of 1.3 meV.

Subject Categories:

  • Lasers and Masers
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE