Accession Number:
ADP011735
Title:
THz Sources Based on Semiconductor Quantum Structures
Descriptive Note:
Corporate Author:
TECHNISCHE UNIV VIENNA (AUSTRIA) INST FUER FESTKOERPERELEKTRONIK
Personal Author(s):
Report Date:
2000-09-29
Pagination or Media Count:
3.0
Abstract:
We present a study on spontaneous THz emission from semiconductor quantum structures. THz emission from parabolically graded AlGaAsGaAs quantum wells driven by an in-plane electric field has been measured. We have analyzed the grating coupled radiation in the temperature range from 20 K to 240 K. The peak emission corresponds to the intersubband plasmon in the parabolic potential. From a quantum cascade structure we observe spontaneous THz emission, based on carrier injection into the excited state of a 26 nm quantum well. We have measured luminescence at a photon energy of 17.3 meV with a full linewidth at half maximum of 1.3 meV.
Descriptors:
- *QUANTUM WELLS
- *SEMICONDUCTOR DEVICES
- FOURIER TRANSFORMATION
- COUPLING(INTERACTION)
- SYMPOSIA
- EXCITATION
- GALLIUM ARSENIDES
- ALUMINUM GALLIUM ARSENIDES
- EMISSION SPECTRA
- ELECTRIC FIELDS
- ELECTRON ENERGY
- FAR INFRARED RADIATION
- FREQUENCY BANDS
- GRATINGS(SPECTRA)
- INFRARED LASERS
- PARABOLAS
- PHOTONS
- LUMINESCENCE
- ELECTRON TRANSITIONS
- PLASMONS
- INFRARED SPECTROMETERS
- SPECTRAL LINES
- CASCADE STRUCTURES
Subject Categories:
- Lasers and Masers
- Optics
- Quantum Theory and Relativity