Accession Number:

ADP011733

Title:

Feasibility of a Si(1-x)Ge(x) THz Resonant-State Laser

Descriptive Note:

Corporate Author:

ROYAL INST OF TECH STOCKHOLM (SWEDEN)

Personal Author(s):

• Gousev, Yu. P.
• Altukhov, I. V.
• Kagan, M. S.
• Sinis, V. P.
• Olsson, H. K.

Report Date:

2000-09-29

Pagination or Media Count:

3.0

Abstract:

We report on pulsed THz emission from Si1-xGex structures d-doped with Boron Si1-xGex layer was sandwiched between two Si layers grown by MBE on n-type Si substrate. Optical resonator was formed by high-accuracy polishing of lateral facets. Non-thermal emission was observed at electric field 250 Vcm and pulse duration was 1 micro s. We believe the emission is due to the population inversion of carriers in the Si1-xGex quantum well.

Descriptors:

• *QUANTUM WELLS
• *SILICON COMPOUNDS
• *GERMANIUM COMPOUNDS
• SOLID STATE LASERS
• HIGH FREQUENCY
• SYMPOSIA
• ELECTRIC FIELDS
• SUBSTRATES
• PULSE RATE
• FREQUENCY BANDS
• FEASIBILITY STUDIES
• N TYPE SEMICONDUCTORS
• GAS LASERS
• BORON
• RADIOFREQUENCY
• INFRARED FILTERS
• OPTICAL PUMPING
• MOLECULAR LASERS
• MOLECULAR BEAM EPITAXY

Subject Categories:

• Lasers and Masers
• Optics
• Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE