Accession Number:

ADP011733

Title:

Feasibility of a Si(1-x)Ge(x) THz Resonant-State Laser

Descriptive Note:

Corporate Author:

ROYAL INST OF TECH STOCKHOLM (SWEDEN)

Report Date:

2000-09-29

Pagination or Media Count:

3.0

Abstract:

We report on pulsed THz emission from Si1-xGex structures d-doped with Boron Si1-xGex layer was sandwiched between two Si layers grown by MBE on n-type Si substrate. Optical resonator was formed by high-accuracy polishing of lateral facets. Non-thermal emission was observed at electric field 250 Vcm and pulse duration was 1 micro s. We believe the emission is due to the population inversion of carriers in the Si1-xGex quantum well.

Subject Categories:

  • Lasers and Masers
  • Optics
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE