Feasibility of a Si(1-x)Ge(x) THz Resonant-State Laser
ROYAL INST OF TECH STOCKHOLM (SWEDEN)
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We report on pulsed THz emission from Si1-xGex structures d-doped with Boron Si1-xGex layer was sandwiched between two Si layers grown by MBE on n-type Si substrate. Optical resonator was formed by high-accuracy polishing of lateral facets. Non-thermal emission was observed at electric field 250 Vcm and pulse duration was 1 micro s. We believe the emission is due to the population inversion of carriers in the Si1-xGex quantum well.
- Lasers and Masers
- Quantum Theory and Relativity