Optical and Electrical Properties of As-Deposited LPCVD SiO sub x N sub y Thin Films
BUCHAREST UNIV (ROMANIA) FACULTY OF PHYSICS
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The silicon oxynitride SiOxNy films have several applications in opto- and micro-electronics technology thin gate dielectrics, optical wave guides and membranes for microelectromechanical systems MEMS. In some applications it is necessary a controllable variable refractive index of the silicon oxynitride films. In others, the defect density at the Sia-SiOxNy interface should be well controlled. This paper deals with these issues and an investigation of the relationship between deposition parameters and the physical properties of the a-SiOxNy films is done. Amorphous silicon oxynitride films of various compositions were deposited by low pressure chemical vapor deposition LPCVD at temperature around 800 degrees centigrade and 400 mTorr, using mixture of SiCl2H2-NH3-N2O. The investigations on optical and electrical properties of the samples were made using spectroellipsometry and capacitance voltage measurements.
- Electrooptical and Optoelectronic Devices
- Solid State Physics