Accession Number:

ADP011561

Title:

Analysis of a-SiO2/ a-Si Multilayer Structures by Ion Beam Methods and Electron Spin Resonance

Descriptive Note:

Corporate Author:

BUCHAREST UNIV (ROMANIA) FACULTY OF PHYSICS

Report Date:

2001-06-01

Pagination or Media Count:

8.0

Abstract:

Multilayered structures of a-SiSiO2 sequences were deposited using a magnetron sputtering system, where Si atoms are sputtered in an Ar-O2 mixture. All samples have the same total thickness 250 nm and the thicknesslayer is between 2 nm and 16 nm. The purpose of this paper is to investigate the inhomogeneity of these films and its limit. The sample composition and thickness were investigated by conventional Rutherford backscattering spectrometry RBS, high resolution RBS using a magnetic spectrograph and elastic recoil detection ERD. The analysis of the conventional RBS and ERD spectra has revealed that samples with 16 nmlayer consists of a-SiSiO2 sequences. The high-resolution RBS measurements have also shown a multilayered structure for samples with a smaller layer thickness.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE