Accession Number:

ADP011546

Title:

Optical and Electrical Properties of Amorphous (GeS2) sub 100-x Ga sub x Thin Films

Descriptive Note:

Corporate Author:

BULGARIAN ACADEMY OF SCIENCES SOFIA INSTITUTE OF SOLID STATE PHYSICS

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

Results from the study of basic optical and electrical parameters of semiconducting GeS2 100-x Gax x0, 4, 8, 12 at amorphous layers have been summarized. The investigation of the optical absorption has shown that the introduction of Ga leads to a shift in the absorption edge towards lower energies in comparison with Ge S2. The spectral distribution of the refractive index n, accounting the influence of photoexposure, has been specified.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE