Accession Number:

ADP011545

Title:

Photoconductivity and Transport Properties of As-Se Thin Films

Descriptive Note:

Corporate Author:

MOLDOVA ACADEMY OF SCIENCES KISHINEV INST OF APPLIED PHYSICS

Report Date:

2001-06-01

Pagination or Media Count:

7.0

Abstract:

Steady-state and transient photo conductivity characteristics of thermally and laser-beam deposited chalcogenide amorphous films As40Se60 and As50Se500 are studied at varied light intensity and temperature. The lux-ampere characteristics are shown to change the power exponent from a value greater than 0.5 at low intensities to the value less than 0.5 at high intensities, indicating the change in recombination reaction. The transient photocurrents in step-function mode of excitation were found to be consistent with the model of trap-controlled non-stationary capture and recombination in exponentially distributed in energy hole traps. Evaluating of the trap energy distribution parameter independently from the photocurrent transients as well as from the dependence of steady-state photoconductivity measurements yields consistent results.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Ceramics, Refractories and Glass

Distribution Statement:

APPROVED FOR PUBLIC RELEASE