Accession Number:

ADP011535

Title:

Features of Physicochemical Interaction in Thin-Film System on the Base of Arsenic Trisulphide and Copper

Descriptive Note:

Corporate Author:

UKRAINIAN ACADEMY OF SCIENCES KIEV INST OF SEMICONDUCTOR PHYSICS

Personal Author(s):

Report Date:

2001-06-01

Pagination or Media Count:

10.0

Abstract:

Physicochemical interactions in amorphous As2S3 copper thin film systems were studied by the methods of resistometry, ellipsometry, microscopy and by the chemical dissolution. It was shown that considerable variation of chemical process activity observed in these systems is caused by an essential dependence of the physicochemical interaction rate on chalcogenide film stoichiometry and imperfection of its structure. Ellipsometric modeling results indicate that the thickness distribution of the dissolved copper is close to a rectangular shape. It confirms reactionary nature of interaction. Application of our thermochemical model for a probability estimation of quasi-molecular reactions of copper and oxygen with polymerized and non-polymerized fragments in arsenic trisulfide film enabled to give qualitative description of the interaction mechanism. Comparison with As2S3-Ag system is made. Results presented in this work indicate some new ways to control physicochemical interaction process in amorphous chalcogenide-metal thin-film systems.

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE