Accession Number:

ADP011534

Title:

Time-of-Flight Technique for Investigation of Amorphous Chalcogenides and Barrier Structures on Their Base

Descriptive Note:

Corporate Author:

RYAZAN STATE RADIOENGINEERING ACADEMY (RUSSIA)

Personal Author(s):

• Vikhrov, S. P.
• Vishnyakov, N. V.
• Maslov, A. A.
• Mishustin, V. G.

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

The reliability of any electronic device depends on quality of contact between metal and semiconductor. For crystalline semiconductors a contact phenomenon is studied well. For unordered semiconductors as distinct from crystalline ones so far there is no unified theory of formation of metal unordered semiconductor contact. Therefore investigations of unordered semiconductors and barrier structures on their base are actual scientific and applied problem. The modified time of flight technique is worked out specially for unordered semiconductors like as amorphous chalcogenides and amorphous hydrogenated silicon. The traditional time of flight drift mobility technique measures time during the carriers transit through sample.

Descriptors:

• *ELECTRIC FIELDS
• METALS
• SYMPOSIA
• EXCITATION
• CHARGE CARRIERS
• AMORPHOUS MATERIALS
• CRYSTALS
• SEMICONDUCTORS
• BARRIERS
• RUSSIA
• MONOCHROMATIC LIGHT
• CHALCOGENS

Subject Categories:

• Electricity and Magnetism
• Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE