Accession Number:

ADP011520

Title:

Radiation Defects in Amorphous As-Ge-S Studied by Positron Annihilation Techniques

Descriptive Note:

Corporate Author:

NATIONAL UNIV LVIV (UKRAINE)

Personal Author(s):

• Shpotyuk, O. I.
• Filipecki, J.
• Golovchak, R. Y.
• Kovalskiy, A. P.
• Hyla, M.

Report Date:

2001-06-01

Pagination or Media Count:

4.0

Abstract:

The nature of coordination defects in chalcogenide vitreous semiconductors of As-Ge-S system have been analyzed before and after gamma-irradiation using the results of positron lifetime measurements. The correlations between the positron lifetime data, the structural features and the chemical compositions of glasses have been established. The identification of negatively charged point defects has been carried out.

Descriptors:

• *POSITRONS
• *ANNIHILATION REACTIONS
• RADIATION
• SYMPOSIA
• AMORPHOUS MATERIALS
• SEMICONDUCTORS
• GLASS
• CHEMICAL COMPOSITION
• DEFECTS(MATERIALS)
• CHALCOGENS
• VITREOUS STATE
• UKRAINE

Subject Categories:

• Ceramics, Refractories and Glass
• Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE