UV Irradiation Effects in Pure and Tin-Doped Amorphous AsSe Films
NATIONAL INST OF MATERIALS PHYSICS BUCHAREST (ROMANIA)
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Pure and tin-doped AsSe amorphous films were investigated. The changes in the MRO induced by Sn were analyzed be accurate profiling the first sharp diffraction peak FSDP in the X-ray diffraction diagram. A shift of FSDP as a function of tin concentration was observed. The structural changes induced by ultraviolet rays lambda 336 nm for various time intervals of irradiation were revealed by small angle X-ray diffraction. It was revealed the formation of a special layer at the surface of the films, whose thickness increases during UV irradiation.
- Electrooptical and Optoelectronic Devices